Hiksemi Wave P 256GB M.2 NVMe SSD – Entry‑level PCIe 3.0 x4 NVMe M.2 2280 SSD with up to 2,280 MB/s read and 1,800 MB/s write, 3D NAND, 100 TBW endurance, 1.5M‑hour MTBF, TRIM/S.M.A.R.T. support, ideal for fast boot drives and system upgrades in PCs and laptops.

Product Overview
The Hiksemi HS‑SSD‑WAVE‑P‑256G (Wave P series) is a compact M.2 2280 NVMe SSD built on a PCIe 3.0 x4 interface. With sequential speeds up to 2,280 MB/s read and 1,800 MB/s write, it delivers a noticeable jump over SATA SSDs and mechanical drives for OS boot, application loading, and everyday file transfers. It’s aimed at budget‑conscious users who still want NVMe performance in a small form factor.It uses 3D NAND flash for better density and reliability versus planar NAND, and includes standard enterprise‑grade features like TRIM and S.M.A.R.T. monitoring. Endurance is rated at 100 TBW (total bytes written) with an MTBF of 1.5 million hours, which is solid for a 256 GB entry‑level drive. Power draw is low (up to ~1.6 W max), helping keep thermals and noise down in small PCs and laptops. Hiksemi typically backs the Wave P series with a 3‑year limited warranty.

Key Features
- 256 GB Capacity – Practical size for OS, apps, and key games or projects.
- M.2 2280 Form Factor – Standard size for most modern laptops and desktops with an M.2 slot.
- PCIe 3.0 x4 NVMe Interface – Much faster than SATA SSDs for sequential and random workloads.
- Up to 2,280 MB/s Read – Quick boot times and fast large‑file access.
- Up to 1,800 MB/s Write – Responsive saves, installs, and file copies.
- 3D NAND Flash – Improved reliability and efficiency vs older planar NAND.
- 100 TBW Endurance – Suitable for typical consumer and office usage patterns.
- 1.5M‑Hour MTBF – Strong reliability rating for long‑term operation.
- TRIM & S.M.A.R.T. Support – Helps maintain performance and monitor drive health.
- Low Power (~1.6 W Max) – Good for thermals in compact systems.



Specifications
- Product Code: HS‑SSD‑WAVE‑P‑256G
- Product Description:
- Capacity: 256 GB
- Form Factor: M.2 2280 (22 × 80 mm)
- Interface: PCIe 3.0 x4, NVMe
- NAND Type: 3D NAND
- Sequential Read: Up to 2,280 MB/s
- Sequential Write: Up to 1,800 MB/s
- Random 4K Read: Up to ~90K IOPS
- Random 4K Write: Up to ~320K IOPS
- Endurance (TBW): 100 TB
- MTBF: 1,500,000 hours
- Max Power: ~1.6 W
- Operating Temperature: 0–70 °C
- Storage Temperature: −40–85 °C
- Features: TRIM, S.M.A.R.T., low power, compact design